OptiMOS®-P2 Power-Transistor
Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C pe...
OptiMOS®-P2 Power-Transistor
Features P-channel - Logic Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested
IPD70P04P4L-08
Product Summary V DS R DS(on) ID
-40 V 7.8 mW -70 A
PG-TO252-3-313
Type IPD70P04P4L-08
Package
Marking
PG-TO252-3-313 4P04L08
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=-10V
T C=100°C, V GS=-10V1)
Pulsed drain current1) Avalanche energy, single pulse1)
I D,pulse E AS
T C=25°C I D=-35A
Avalanche current, single pulse
I AS -
Gate source
voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Rev. 1.0
page 1
Value
-70
-55
-280 24 -70 ±162) 75 -55 ... +175 55/175/56
Unit A
mJ A V W °C
2011-03-14
IPD70P04P4L-08
Parameter
Symbol
Conditions
Thermal characteristics1)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 2.0 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current
Gate-source leakage current Drain-source on-state resistance
V (BR)DSS V GS=0V, I D= -1mA -40 -
-V
V GS(th) V DS=V GS, I D=-120µA -1.2 -1....
