isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.95Ω ·E...
isc N-Channel
MOSFET Transistor IPD70R950CE,IIPD70R950CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fast switching ·Very high commutation ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
700
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
7.4
IDM
Drain Current-Single Pulsed
12
PD
Total Dissipation @TC=25℃
68
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-40~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 1.85 62
UNIT ℃/W ℃/W
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isc N-Channel
MOSFET Transistor IPD70R950CE,IIPD70R950CE
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID=1mA
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=0.15mA
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=1.5A
IGSS
Gate-Source Leakage Current
VGS=20V; VDS=0V
IDSS
Drain-Source Leakage Current
VDS=700V; VGS= 0V
VSD
Diode forward
voltage
IF=2.2A, VGS = 0V
MIN TYP MAX UNIT
700
V
2.5
3.5
V
0.95
Ω
0.1
μA
1
μA
0.9
V
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