IPD80R1K4CE

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 800VCoolMOS™CEPowerTransistor IPx80R1K4CE DataSheet Rev.2.3 Final PowerManagement&Multimarket 800VCoolMOS™CEPowerTransistor IPD80R1K4CE,IPU80R1K4CE 1Description CoolMOS™CEisarevolutionarytechnologyforhighvoltagepower MOSFETs.Thehighvoltagecapabilitycombinessafetywithperformance andruggednesstoallowstabledesignsathighestefficiencylevel. CoolMOS™800VCEcomeswithaselectedpackagechoiceofferingthe benefitofreducedsystemcostsandhigherpowerdensitydesigns. Features Highvoltagetechnology Extremedv/dtrated Highpeakcurrentcapability Lowgatecharge Loweffectivecapacitances Qualified according to JEDEC Standard Pb-freeleadplating;RoHScompliant; halogenfreemoldcompound DPAK tab 2 1 3 IPAK tab 1 23 Drain Pin 2 Gate Pin 1 Source Pin 3 Benefits Increasedpowerdensitysolutionsduetosmallerpackage Systemcost/sizesavingsduetoreducedcoolingrequirements Highersystemreliabilityduetolowoperatingtemperatures Applications LEDLightingforretrofitapplicationsinQRFlybacktopology Table1KeyPerformanceParameters Parameter VDS @ Tj=25°C RDS(on),max Qg,typ ID,pulse VGS(th),typ CO(tr),typ Value 800 1.4 23 12 3 51 Unit V Ω nC A V pF Type/OrderingCode IPD80R1K4CE IPU80R1K4CE Package PG-TO 252 PG-TO 251 Marking 8R1K4CE RelatedLinks see Appendix A Final Data Sheet 2 Rev. 2.3, 2020-05-20...