IPD85P04P4-07
OptiMOS®-P2 Power-Transistor
Product Summary V DS R DS(on) ID -40 7.3 -85 V mW A
Features • P-channel -...
IPD85P04P4-07
OptiMOS®-P2 Power-Transistor
Product Summary V DS R DS(on) ID -40 7.3 -85 V mW A
Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested PG-TO252-3-313
Type IPD85P04P4-07
Package PG-TO252-3-313
Marking 4P0407
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions T C=25°C, V GS=-10V T C=100°C, V GS=-10V2) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source
voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=-42.5A T C=25 °C Value Unit
Continuous drain current
ID
-85
A
-61 -340 30 -85 ±20 88 -55 ... +175 55/175/56 mJ A V W °C
Rev. 1.0
page 1
2011-04-18
Free Datasheet http://www.datasheet4u.com/
IPD85P04P4-07
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current V (BR)DSS V GS=0V, I D= -1mA V GS(th) I DSS V DS=V GS, I D=-150µA V DS=-32V, V GS=0V, T j=25°C V DS=-32V, V GS=0V, T j=125°C2) Gate-source leakage current Drain-so...
