OptiMOSTM-T2 Power-Transistor
Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C ...
OptiMOSTM-T2 Power-Transistor
Features N-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
IPD90N10S4-06
Product Summary VDS RDS(on),max ID
100 V 6.7 mW 90 A
PG-TO252-3-313
TAB
1 3
Type IPD90N10S4-06
Package
Marking
PG-TO252-3-313 4N1006
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source
voltage Power dissipation Operating and storage temperature
I D,pulse T C=25°C
E AS I D=45A
I AS -
V GS
-
P tot T C=25°C
T j, T stg -
Value 90
72
360 250 70 ±20 136 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.0
page 1
2014-06-30
IPD90N10S4-06
Parameter
Symbol
Conditions
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 1.1 K/W - - 62 - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown
voltage
V (BR)DSS V GS=0V, I D= 1mA
100 -
-V
Gate threshold
voltage
V GS(th) V DS=V GS, I D=90µA
2.0 2.7 3.5
Zero gate
voltage drain current
I DSS
V DS=100V, V GS=0V
- 0.01 1 µA
V DS=...
