IPDD60R150G7
MOSFET
600VCoolMOS™G7SJPowerDevice
TheC7GOLDseries(G7)forthefirsttimebringstogethertheben...
IPDD60R150G7
MOSFET
600VCoolMOS™G7SJPowerDevice
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand theimprovedthermalpropertiesoftheDDPAKpackagetoenablea possibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW.
Pin 1
5
Features
C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg. Suitableforhardandsoftswitching(PFCandhighperformanceLLC) C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint. DDPAKpackagehasinbuilt4thpinKelvinSourceconfigurationandlow parasiticsourceinductance(~3nH). DDPAKpackageisMSL1compliant,totalPb-freeandhaseasyvisual inspectionleads. DDPAKSMDpackagecombinedwithleadfreedieattachprocess enablesimprovedthermalperformance(Rth).
Benefits
C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling fasterswitchingleadingtohigherefficiency. PossibilitytoincreasseeconomiesofscalesbyusageinPFCandPWM topologiesintheapplication. C7Goldcanreach50mΩinDDPAK115mm2footprint,whereasprevious BICC7600Vwas40mΩin150mm2D2PAKfootprint. ReducingparasiticsourceinductancebyKelvinSourceimproves efficiencybyfasterswitchingandeaseofuseduetolessringing. DDPAKpackageiseasytouseandhasthehighestqualitystandards. ImprovedthermalsenableSMDDDPAKpackagetobeusedinhigher currentdesignsthanha...