IPDD60R150G7

IPDD60R150G7 MOSFET 600VCoolMOS™G7SJPowerDevice TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand theimprovedthermalpropertiesoftheDDPAKpackagetoenablea possibleSMDsolutionforhighcurrenttopologiessuchasPFCupto3kW. Pin 1 5 Features C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg. Suitableforhardandsoftswitching(PFCandhighperformanceLLC) C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint. DDPAKpackagehasinbuilt4thpinKelvinSourceconfigurationandlow parasiticsourceinductance(~3nH). DDPAKpackageisMSL1compliant,totalPb-freeandhaseasyvisual inspectionleads. DDPAKSMDpackagecombinedwithleadfreedieattachprocess enablesimprovedthermalperformance(Rth). Benefits C7GoldFOMRDS(on)*Qgis15%betterthanpreviousC7600Venabling fasterswitchingleadingtohigherefficiency. PossibilitytoincreasseeconomiesofscalesbyusageinPFCandPWM topologiesintheapplication. C7Goldcanreach50mΩinDDPAK115mm2footprint,whereasprevious BICC7600Vwas40mΩin150mm2D2PAKfootprint. ReducingparasiticsourceinductancebyKelvinSourceimproves efficiencybyfasterswitchingandeaseofuseduetolessringing. DDPAKpackageiseasytouseandhasthehighestqualitystandards. ImprovedthermalsenableSMDDDPAKpackagetobeusedinhigher currentdesignsthanha...