DatasheetsPDF.com

IPF13N03LA Datasheet

Part Number IPF13N03LA
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description OptiMOS 2 Power-Transistor
Datasheet IPF13N03LA DatasheetIPF13N03LA Datasheet (PDF)

IPF13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated Product Summary V DS R DS(on),max ID 25 13.3 30 V mΩ A P-TO252-3-23 Type IPF13N03LA Package P-TO252-3-23 Ordering Code Q67042-S4195 Marking 13N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter .

  IPF13N03LA   IPF13N03LA






OptiMOS 2 Power-Transistor

IPF13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated Product Summary V DS R DS(on),max ID 25 13.3 30 V mΩ A P-TO252-3-23 Type IPF13N03LA Package P-TO252-3-23 Ordering Code Q67042-S4195 Marking 13N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C2) I D=24 A, R GS=25 Ω I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Value 30 30 210 60 6 ±20 46 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.2 page 1 2003-12-19 IPF13N03LA Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=125 °C Gate-source le.


2005-04-16 : LA5603    MLED930    M38198    BU2527A    F4500    ES07D    FDI047AN08A0    FMMT2484    FQP90N10V2    FQPF90N10V2   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)