IPG20N06S2L-50
OptiMOS® Power-Transistor
Product Summary V DS R DS(on),max4) ID 55 50 20 V mΩ A
Features • Dual N-cha...
IPG20N06S2L-50
OptiMOS® Power-Transistor
Product Summary V DS R DS(on),max4) ID 55 50 20 V mΩ A
Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested PG-TDSON-8-4
Type IPG20N06S2L-50
Package PG-TDSON-8-4
Marking 2N06L50
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active2) Symbol ID Conditions T C=25 °C, V GS=10 V1) Value Unit A
20
T C=100 °C, V GS=10 V Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source
voltage Power dissipation one channel active Operating and storage temperature IEC climatic category; DIN IEC 68-1
16
I D,pulse E AS I AS V GS P tot T j, T stg -
I D=10A T C=25 °C -
80 60 15 ±20 51 -55 ... +175 55/175/56 mJ A V W °C
Rev. 1.0
page 1
2009-09-07
IPG20N06S2L-50
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current4) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=19 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source ...
