IPG20N06S2L-65

IPG20N06S2L-65 OptiMOS® Power-Transistor Product Summary V DS R DS(on),max3) ID 55 65 20 V mΩ A Features Dual N-channel Logic Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S2L-65 Package PG-TDSON-8-4 Marking 2N06L65 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active1) Symbol ID Conditions T C=25 °C, V GS=10 V Value Unit A 20 T C=100 °C, V GS=10 V Pulsed drain current1) one channel active Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage Power dissipation one channel active Operating and storage temperature IEC climatic category; DIN IEC 68-1 14 I D,pulse E AS I AS V GS P tot T j, T stg - I D=10A T C=25 °C - 80 40 15 ±20 43 -55 ... +175 55/175/56 mJ A V W °C Rev. 1.0 page 1 2009-09-07 IPG20N06S2L-65 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current3) V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=14 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source le...