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IPG20N06S2L-65A Datasheet

Part Number IPG20N06S2L-65A
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPG20N06S2L-65A DatasheetIPG20N06S2L-65A Datasheet (PDF)

OptiMOS® Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S2L-65A Product Summary VDS RDS(on),max3) ID 55 V 65 mΩ 20 A PG-TDSON-8-10 Type IPG20N06S2L-65A Package PG-TDSON-8-10 Marking 2N06L65 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol .

  IPG20N06S2L-65A   IPG20N06S2L-65A






Part Number IPG20N06S2L-65
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet IPG20N06S2L-65A DatasheetIPG20N06S2L-65 Datasheet (PDF)

IPG20N06S2L-65 OptiMOS® Power-Transistor Product Summary V DS R DS(on),max3) ID 55 65 20 V mΩ A Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S2L-65 Package PG-TDSON-8-4 Marking 2N06L65 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active1) Symbol ID Conditi.

  IPG20N06S2L-65A   IPG20N06S2L-65A







Power-Transistor

OptiMOS® Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S2L-65A Product Summary VDS RDS(on),max3) ID 55 V 65 mΩ 20 A PG-TDSON-8-10 Type IPG20N06S2L-65A Package PG-TDSON-8-10 Marking 2N06L65 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V Pulsed drain current1) one channel active I D,pulse - Avalanche energy, single pulse1, 3) Avalanche current, single pulse3) Gate source voltage E AS I AS V GS I D=10A - Power dissipation one channel active P tot T C=25 °C Operating and storage temperature T j, T stg - IEC climatic category; DIN IEC 68-1 - - Rev. 1.0 page 1 Value 20 Unit A 14 80 40 15 ±.


2016-11-24 : IPS80R1K4P7    IPU80R1K4P7    IPS70R2K0CE    IPP80R450P7    IPP80R1K4P7    IPP80R280P7    IPG20N10S4L-35    74LCXH16245    IPG20N06S4L-26A    IPG20N06S2L-65A   


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