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IPG20N06S4L-11A Datasheet

Part Number IPG20N06S4L-11A
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPG20N06S4L-11A DatasheetIPG20N06S4L-11A Datasheet (PDF)

OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S4L-11A Product Summary VDS RDS(on),max4) ID 60 V 11.2 mW 20 A PG-TDSON-8-10 Type IPG20N06S4L-11A Package PG-TDSON-8-10 Marking 4N06L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Sym.

  IPG20N06S4L-11A   IPG20N06S4L-11A






Part Number IPG20N06S4L-11
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet IPG20N06S4L-11A DatasheetIPG20N06S4L-11 Datasheet (PDF)

IPG20N06S4L-11 OptiMOS™-T2 Power-Transistor Product Summary V DS R DS(on),max4) ID 60 11.2 20 V mW A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N06S4L-11 Package PG-TDSON-8-4 Marking 4N06L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol Conditi.

  IPG20N06S4L-11A   IPG20N06S4L-11A







Power-Transistor

OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S4L-11A Product Summary VDS RDS(on),max4) ID 60 V 11.2 mW 20 A PG-TDSON-8-10 Type IPG20N06S4L-11A Package PG-TDSON-8-10 Marking 4N06L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active I D T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS I AS V GS I D=10A - P tot T C=25 °C Operating and storage temperature T j, T stg - Value 20 20 80 165 15 ±16 65 -55 ... +175 Unit A mJ A V W °C Rev. 1.0 page 1 2015-05-04 IPG20N06S4L-11A Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 2.3 K/W - 100 - 60 - Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 60 - -V Gate threshold voltage V GS(th) V DS=V GS, I D= 28µA 1.2 1.7 2.2 Zero gate voltage drain current4.


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