IPG20N10S4-36A
OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualif...
IPG20N10S4-36A
OptiMOS™-T2 Power-Transistor
Features Dual N-channel Normal Level - Enhancement mode AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)
Product Summary VDS RDS(on),max4) ID
100 V 36 mW 20 A
PG-TDSON-8-10
Type IPG20N10S4-36A
Package PG-TDSON-8-10
Marking 4N1036
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active
I D T C=25 °C, V GS=10 V1)
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4)
Gate source
voltage
Power dissipation one channel active
T C=100 °C, V GS=10 V2)
I D,pulse -
E AS I AS V GS
I D=10A -
P tot T C=25 °C
Operating and storage temperature T j, T stg -
Value
20
17
80 60 15 ±20 43 -55 ... +175
Unit A
mJ A V W °C
Rev. 1.1
page 1
2015-04-13
IPG20N10S4-36A
Parameter
Symbol
Conditions
Thermal characteristics2, 4)
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
- - 3.5 K/W - 100 - 60 -
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown
voltage Gate threshold
voltage Zero gate
voltage drain current4)
Gate-source leakage current4) Drain-source on-state resistance4)
V (BR)DSS V GS=0 V, I...
