IPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R ...
IPI076N12N3 G IPP076N12N3 G
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant; halogen free
Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
120 V 7.6 mW 100 A
Type
IPI076N12N3 G
IPP076N12N3 G
Package Marking
PG-TO262-3 076N12N
PG-TO220-3 076N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 W
Gate source
voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
100 76 400 230 ±20 188 -55 ... 175 55/175/56...
