OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for tar...
OptiMOS®2 Power-Transistor
Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target applications
N-channel - Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Superior thermal resistance 175 °C operating temperature dv /dt rated Pb-free lead plating; RoHS compliant
IPI09N03LA, IPP09N03LA
Product Summary V DS R DS(on),max ID
25 V 9.2 mΩ 50 A
PG-TO262-3-1
PG-TO220-3-1
Type IPI09N03LA IPP09N03LA
Package PG-TO262-3-1 PG-TO220-3-1
Marking 09N03LA 09N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=45 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C
Gate source
voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) J-STD20 and JESD22
Rev. 1.91
page 1
Value 50 46 350 75
6
±20 63 -55 ... 175 55/175/56
Unit A
mJ kV/µs V W °C
2008-04-29
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area5)
IPI09N03LA, IPP09N03LA
min.
Values typ.
Unit max.
- - 2.4 K/W - - 62 - - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static c...