OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 ...
OptiMOS® Power-Transistor
Features N-channel Logic Level - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature Green package (lead free)
PG-TO263-3-2
Ultra low Rds(on)
100% Avalanche tested
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11
Product Summary V DS R DS(on),max (SMD version) ID
55 V 10.7 mW 80 A
PG-TO220-3-1
PG-TO262-3-1
Type IPB80N06S2L-11 IPP80N06S2L-11 IPI80N06S2L-11
Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1
Ordering Code Marking SP0002-18177 2N06L11 SP0002-18175 2N06L11 SP0002-18176 2N06L11
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2) Avalanche energy, single pulse2) Gate source
voltage4)
I D,pulse E AS V GS
T C=25 °C I D=80A
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value 80
58
320 280 ±20 158 -55 ... +175
Unit A
mJ V W °C
Rev. 1.1
page 1
2010-10-26
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
- - 0.95 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area5)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-s...
