IPP030N10N3G

IPP030N10N3 G IPI030N10N3 G OptiMOS™3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectification Type IPP030N10N3 G IPI030N10N3 G 100 V 3 mW 100 A Package Marking PG-TO220-3 030N10N PG-TO262-3 030N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=100 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) See figure 3 Value 100 100 400 1000 ±20 300 -55 ... 175 55/175/56 Unit A mJ V W °C Rev. 2.1 page 1 2011-07-18 IPP030N10N3 G IPI030N10N3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) min. Values typ. Unit max. - - 0.5 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - -V Gate thre...