Type
OptiMOSTM Power-Transistor
Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested ...
Type
OptiMOSTM Power-Transistor
Features Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21
IPP060N06N
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
60 V 6.0 mW 45 A
32 nC 27 nC
PG-TO220-3
Type IPP060N06N
Package PG-TO220-3
Marking 060N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
45 A 45
V GS=10 V, T C=25 °C, R thJA =50K/W
17
Pulsed drain current2)
I D,pulse T C=25 °C
180
Avalanche energy, single pulse3) E AS I D=45 A, R GS=25 W
60 mJ
Gate source
voltage
V GS
±20 V
1) J-STD20 and JESD22 2) See figure 3 for more detailed information
3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C, R thJA=50 K/W
Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1
IPP060N06N
Value 83
3.0
-55 ... 175 55/175/56
Unit W
°C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal charact...