Power-Transistor. IPP110N20NA Datasheet

IPP110N20NA Datasheet PDF


Part IPP110N20NA
Description Power-Transistor
Feature IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent .
Manufacture Infineon
Datasheet
Download IPP110N20NA Datasheet


IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Feature IPP110N20NA Datasheet
isc N-Channel MOSFET Transistor IPP110N20NAIIPP110N20NA ·FE IPP110N20NA Datasheet




IPP110N20NA
IPB107N20NA IPP110N20NA
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max (TO263)
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB107N20NA
IPP110N20NA
200 V
10.7 mW
88 A
Package
Marking
PG-TO263-3
107N20NA
PG-TO220-3
110N20NA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current1)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A, R GS=25 W
Reverse diode dv /dt
dv /dt
Gate source voltage
V GS
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
Value
88
63
352
560
10
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.1
page 1
2011-05-11



IPP110N20NA
IPB107N20NA IPP110N20NA
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area2)
min.
Values
typ.
Unit
max.
- - 0.5 K/W
- - 62
- - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=270 µA
I DSS
V DS=160 V, V GS=0 V,
T j=25 °C
200
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
Drain-source on-state resistance
V DS=160 V, V GS=0 V,
T j=125 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=88 A,
(TO220)
V GS=10 V, I D=88 A,
(TO263)
-
-
-
-
10 100
1 100 nA
9.9 11 mW
9.6 10.7
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.1
page 2
2011-05-11




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