OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very l...
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on)max ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target application
Ideal for high-frequency switching and synchronous rectification
Type
IPP114N12N3 G
IPP114N12N3 G
120 V 11.4 mΩ 75 A
Package Marking
PG-TO220-3 114N12N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current2)
ID I D,pulse
T C=25 °C T C=100 °C T C=25 °C
Avalanche energy, single pulse
E AS I D=75 A, R GS=25 Ω
Gate source
voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Value 75 53 300...
