IPP120N10S4-05

IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS®-T2 Power-Transistor Product Summary VDS RDS(on),max (SMD version) Features ID N-channel - Normal Level - Enhancement mode AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 100 V 5.0 mW 120 A PG-TO220-3-1 MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type IPB120N10S4-05 IPI120N10S4-05 IPP120N10S4-05 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N1005 4N1005 4N1005 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=60A I AS - V GS - P tot T C=25°C T j, T stg - Value 120 95 480 330 120 ±20 190 -55 ... +175 Unit A mJ A V W °C Rev.1.0 page 1 2014-07-01 IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - - 0.8 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (B...