IPP12CNE8NG

www.DataSheet4U.com IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 12.4 67 V mΩ A Ideal for high-frequency switching and synchronous rectification Type IPB12CN10N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Package Marking PG-TO263-3 12CNE8N PG-TO252-3 12CNE8N PG-TO262-3 12CNE8N PG-TO220-3 12CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 67 48 268 154 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=67 A, R GS=25 Ω I D=67 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 125 -55 ... 175 55/175/56 J-STD20 and JESD22 see figure 3 2) 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V page 1 2006-02-17 Rev. 1.01 www.DataSheet4U.com IPB12CNE8N G IPI12CNE8N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO220, TO262, TO263) Thermal...