IPP230N06L3G

Type OptiMOS™3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 IPB230N06L3 G IPP230N06L3 G Product Summary VDS RDS(on),max ID 60 V 23 mW 30 A Type IPB230N06L3 G IPP230N06L3 G Package Marking PG-TO263-3 230N06L PG-TO220-3 230N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse3) E AS I D=20 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg 1)J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Rev. 2.2 page 1 Value 30 21 120 13 ±20 36 -55 ... 175 Unit A mJ V W °C 2012-12-19 IPB230N06L3 G IPP230N06L3 G Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm² cooling area4) min. Values typ. Unit max. - - 4.2 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage ...