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IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13
OptiMOS®-T2 Power-Transistor
Product Summary V DS R...
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IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13
OptiMOS®-T2 Power-Transistor
Product Summary V DS R DS(on),max (SMD version) ID 55 13.1 45 V mΩ A
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type IPB45N06S3L-13 IPI45N06S3L-13 IPP45N06S3L-13
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 3N06L13 3N06L13 3N06L13
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source
voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=22.5 A Value 45 37 180 145 45 ±16 65 -55 ... +175 55/175/56 mJ A V W °C Unit A
Rev. 1.1
page 1
2007-11-07
Datasheet pdf - http://www.DataSheet4U.net/
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IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13
Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain...