IPP45N06S4-09

www.DataSheet.co.kr IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 9.2 45 V mΩ A Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N0609 4N0609 4N0609 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=22.5A T C=25°C Value 45 45 180 97 45 ±20 71 -55 ... +175 55/175/56 mJ A V W °C Unit A Rev. 1.0 page 1 2009-03-24 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain curre...