DatasheetsPDF.com

IPP47N10SL-26 Datasheet

Part Number IPP47N10SL-26
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description SIPMOS Power-Transistor
Datasheet IPP47N10SL-26 DatasheetIPP47N10SL-26 Datasheet (PDF)

www.DataSheet.co.kr IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated • Green package (lead free) 100 26 47 P-TO220-3-1 V m A Type IPP47N10SL-26 IPB47N10SL-26 IPI47N10SL-26 Package Ordering Code Marking N10L26 N10L26 N10L26 PG-TO220-3-1 SP0002-25707 PG-TO263-3-2 SP0002-25701 PG-TO262-3-1 SP0002-25.

  IPP47N10SL-26   IPP47N10SL-26






SIPMOS Power-Transistor

www.DataSheet.co.kr IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 Feature SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated • Green package (lead free) 100 26 47 P-TO220-3-1 V m A Type IPP47N10SL-26 IPB47N10SL-26 IPI47N10SL-26 Package Ordering Code Marking N10L26 N10L26 N10L26 PG-TO220-3-1 SP0002-25707 PG-TO263-3-2 SP0002-25701 PG-TO262-3-1 SP0002-25704 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 47 33 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Page 1 188 400 17.5 6 ±20 175 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID =47 A , VDD =25V, RGS =25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =47A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 2006-02-14 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. max. 0.85 62 62 40 Unit K/W Electrical Characteristics , at Tj.


2011-10-20 : D6376    K2382    K4B2G0446D    K4B2G0846D    K4B2G1646C    K9LBG08U0D    K9HCG08U1D    K9PDG08U5D    K9MDG08U5D    4407A   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)