IPP50R299CP

CoolMOSTM Power Transistor Features Lowest figure of merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Pb-free lead plating; RoHS compliant Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPP50R299CP 550 V 0.299 Ω 23 nC PG-TO220 CoolMOS CP is designed for: Hard- & soft switching SMPS topologies CCM PFC for Notebook adapter, PDP and LCD TV PWM for Notebook adapter, PDP and LCD TV Type IPP50R299CP Package PG-TO220 Marking 5R299P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS T C=100 °C T C=25 °C I D=4.4 A, V DD=50 V I D=4.4 A, V DD=50 V V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 and M3.5 screws Rev. 2.0 page 1 Value 12 8 26 289 0.44 4.4 50 ±20 ±30 104 -55 ... 150 60 Unit A mJ A V/ns V W °C Ncm 2007-11-06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPP50R299CP Value 6.6 26 15 Unit A V/ns Parameter S...