IPP50R399CP

CoolMOSTM Power Transistor Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Pb-free lead plating; RoHS compliant Quailfied according to JEDEC1) for target applications Product Summary V DS @Tjmax R DS(on),max Q g,typ IPP50R399CP 560 V 0.399 Ω 17 nC PG-TO220 CoolMOS CP is designed for: Hard and soft switching SMPS topologies DCM PFC for Lamp Ballast PWM for Lamp Ballast, LCD & PDP TV Type IPP50R399CP Package PG-TO220 Marking 5R399P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS T C=100 °C T C=25 °C I D=3.3 A, V DD=50 V I D=3.3 A, V DD=50 V V DS=0...400 V static AC (f>1 Hz) Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg Mounting torque M3 and M3.5 screws Rev. 2.0 page 1 Value 9 6 20 215 0.33 3.3 50 ±20 ±30 83 -55 ... 150 60 Unit A mJ A V/ns V W °C Ncm 2007-11-06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPP50R399CP Value 4.9 20 15 Unit A V/ns Parameter Symbol Conditions Thermal c...