isc N-Channel MOSFET Transistor
IPP60R199CP，IIPP60R199CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.199Ω...
isc N-Channel
MOSFET Transistor
IPP60R199CP，IIPP60R199CP
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.199Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION ·Ultra low gate charge ·High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
16
IDM
Drain Current-Single Pulsed
51
PD
Total Dissipation @TC=25℃
139
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.9 62
UNIT ℃/W ℃/W
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isc N-Channel
MOSFET Transistor
IPP60R199CP，IIPP60R199CP
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown
Voltage VGS=0V; ID =0.25mA
VGS(th) Gate Threshold
Voltage
VDS=VGS; ID =0.66mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=9.9A
IGSS
Gate-Source Leakage Current
VGS=20V; VDS=0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward
voltage
IF=9.9A; VGS = 0V
MIN TYP MAX UNIT
600
V
2.5
3.5
V
0.199 Ω
0.1
μA
1
μA
1.2
V
NOTICE： ISC reserves the rights to make changes of t...
