IPD64CN10N G IPU64CN10N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(...
IPD64CN10N G IPU64CN10N G
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max ID 100 64 17 V mΩ A
Ideal for high-frequency switching and synchronous rectification Type IPD64CN10N G IPU64CN10N G
Package Marking
PG-TO252-3 64CN10N
PG-TO251-3 64CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode d v /dt Gate source
voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 17 13 68 34 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C I D=17 A, R GS=25 Ω I D=17 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C
mJ kV/µs V W °C
T C=25 °C
44 -55 ... 175 55/175/56
J-STD20 and JESD22 see figure 3
3)
T jmax=150°C and duty cycle D =0.01 for V GS<-5V page 1 2006-02-21
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Rev. 1.01
IPD64CN10N G IPU64CN10N G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO252) R thJC minimal footprint 6 cm² cooling area 4) 3.4 75 50 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 °C, unless otherwise s...
