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IPP65R190C7 Datasheet

Part Number IPP65R190C7
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPP65R190C7 DatasheetIPP65R190C7 Datasheet (PDF)

isc N-Channel MOSFET Transistor IPP65R190C7,IIPP65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE.

  IPP65R190C7   IPP65R190C7






Part Number IPP65R190C7
Manufacturers Infineon
Logo Infineon
Description MOSFET
Datasheet IPP65R190C7 DatasheetIPP65R190C7 Datasheet (PDF)

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 650VCoolMOS™C7PowerTransistor IPP65R190C7 DataSheet Rev.2.1 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPP65R190C7 1Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. CoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhighclassin.

  IPP65R190C7   IPP65R190C7







N-Channel MOSFET

isc N-Channel MOSFET Transistor IPP65R190C7,IIPP65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOSFET offering better efficiency,reduced gate charge,easy implementation and outstanding reliability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 49 PD Total Dissipation @TC=25℃ 72 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.73 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPP65R190C7,IIPP65R190C7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.29mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=5.7A IGSS Gate-Source Leakage Current VGS=20V; VDS=0V IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V VSD Diode forward voltage IF=5.7A; VGS = 0V MIN TYP MAX UNIT 650 .


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