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IPP77N06S2-12

Infineon Technologies

Power-Transistor

OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...


Infineon Technologies

IPP77N06S2-12

File Download Download IPP77N06S2-12 Datasheet


Description
OptiMOS® Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested IPB77N06S2-12 IPP77N06S2-12 Product Summary V DS R DS(on),max (SMD version) ID 55 V 11.7 mΩ 77 A PG-TO263-3-2 PG-TO220-3-1 Type IPB77N06S2-12 IPP77N06S2-12 Package PG-TO263-3-2 PG-TO220-3-1 Ordering Code Marking SP0002-18173 2N0612 SP0002-18172 2N0612 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D= 77 A Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 77 56 308 280 ±20 158 -55 ... +175 55/175/56 Unit A mJ V W °C R...




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