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IPSH6N03LB Datasheet

Part Number IPSH6N03LB
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS2 Power-Transistor
Datasheet IPSH6N03LB DatasheetIPSH6N03LB Datasheet (PDF)

Type IPUH6N03LB IPSH6N03LB OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 6.3 50 V mΩ A Type IPUH6N03LB IPSH6N03LB Package Marking PG-TO251-3 H6N03LB PG-TO251-3-11 H6N03LB Maximum ratings, at T j=25 °C, unless otherwise s.

  IPSH6N03LB   IPSH6N03LB






Part Number IPSH6N03LAG
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPSH6N03LB DatasheetIPSH6N03LAG Datasheet (PDF)

www.DataSheet.co.kr IPDH6N03LA G IPSH6N03LA G IPFH6N03LA G IPUH6N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 6 50 V mΩ A Type IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G .

  IPSH6N03LB   IPSH6N03LB







OptiMOS2 Power-Transistor

Type IPUH6N03LB IPSH6N03LB OptiMOS®2 Power-Transistor Package Marking • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID 30 6.3 50 V mΩ A Type IPUH6N03LB IPSH6N03LB Package Marking PG-TO251-3 H6N03LB PG-TO251-3-11 H6N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current ID T C=25 °C2) T C=100 °C 50 50 200 160 6 ±20 A Pulsed drain current Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C3) I D=50 A, R GS=25 Ω I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 83 -55 ... 175 55/175/56 J-STD20 and JESD22 Rev. 0.3 page 1 2006-05-15 www.DataSheet.in IPUH6N03LB Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=40 µA V DS.


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