IPT004N03L

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,30V IPT004N03L DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features Optimizedfore-fuseandORingapplication Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 0.4 mΩ ID 300 A QOSS 141 nC QG(0V..10V) 252 nC OptiMOSTMPower-MOSFET,30V IPT004N03L HSOF 12345 678 Tab Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT004N03L Package PG-HSOF-8-1 Marking 004N03L RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-10-08 OptiMOSTMPower-MOSFET,30V IPT004N03L TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...