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IPT007N06N

Infineon

MOSFET

IPT007N06N MOSFET OptiMOSTMPower-Transistor,60V Features •100%avalanchetested •Superiorthermalresistance •N-c...


Infineon

IPT007N06N

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Description
IPT007N06N MOSFET OptiMOSTMPower-Transistor,60V Features 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 0.75 mΩ ID 486 A Qoss 227 nC QG(0V..10V) 216 nC HSOF 12345 678 Tab Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT007N06N Package PG-HSOF-8 Marking 007N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2019-07-22 OptiMOSTMPower-Transistor,60V IPT007N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...




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