IPT007N06N
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•100%avalanchetested •Superiorthermalresistance •N-c...
IPT007N06N
MOSFET
OptiMOSTMPower-Transistor,60V
Features
100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
0.75
mΩ
ID 486 A
Qoss 227 nC
QG(0V..10V)
216
nC
HSOF
12345 678
Tab
Drain Tab
Gate Pin 1
Source Pin 2-8
Type/OrderingCode IPT007N06N
Package PG-HSOF-8
Marking 007N06N
RelatedLinks -
1) J-STD20 and JESD22 Final Data Sheet
1
Rev.2.3,2019-07-22
OptiMOSTMPower-Transistor,60V
IPT007N06N
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...