IPT020N10N3

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM3Power-Transistor,100V IPT020N10N3 DataSheet Rev.2.0 Final PowerManagement&Multimarket 1Description Features N-channel,normallevel ExcellentgatechargexRDS(on)product(FOM) Extremelylowon-resistanceRDS(on) Highcurrentcapability 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 2 mΩ ID 300 A OptiMOSTM3Power-Transistor,100V IPT020N10N3 HSOF 12345 678 Tab Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT020N10N3 Package PG-HSOF-8-1 Marking 020N10N3 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2014-02-17 OptiMOSTM3Power-Transistor,100V IPT020N10N3 TableofContents Description . . . . . . . . . . . . . ....