IPU090N03LG

Type IPD090N03L G IPS090N03L G IPF090N03L G IPU090N03L G OptiMOS®3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating; RoHS compliant IPD090N03L G Type Avalanche rated Pb-free plating; RoHS compliant IPF090N03L G 1) Product Summary V DS R DS(on),max ID 30 9 40 V mΩ A IPS090N03L G IPU090N03L G Package Marking PG-TO252-3-11 090N03L PG-TO252-3-23 090N03L PG-TO251-3-11 090N03L PG-TO251-3-21 090N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage 1) Value 40 37 40 30 280 40 40 6 ±20 Unit A I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=12 A, R GS=25 Ω I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V J-STD20 and JESD22 Rev. 1.0 page 1 2006-10-23 Free Datasheet http://www.datasheet-pdf.com/ IPD090N03L G IPS090N03L G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C...