IPU09N03LAG

OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC1) for target application N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Product Summary V DS R DS(on),max (SMD version) ID 25 V 8.6 mΩ 50 A Type IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA Package Marking P-TO252-3-11 09N03LA P-TO252-3-23 09N03LA P-TO251-3-11 09N03LA P-TO251-3-1 09N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse ID I D,pulse E AS T C=25 °C2) T C=100 °C T C=25 °C3) I D=45 A, R GS=25 Ω Reverse diode dv /dt dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 50 45 350 75 6 ±20 63 -55 ... 175 55/175/56 Unit A mJ kV/µs V W °C Rev. 2.0 Downloaded from Elcodis.com electronic components distributor page 1 2006-05-11 IPD09N03LA G IPF09N03LA G IPS09N03LA G IPU09N03LA G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5) - - 2.4 ...