DatasheetsPDF.com

IPU60R2K1CE Datasheet

Part Number IPU60R2K1CE
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPU60R2K1CE DatasheetIPU60R2K1CE Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.7 IDM Drain Current-Single Pulsed 6 PD.

  IPU60R2K1CE   IPU60R2K1CE






Part Number IPU60R2K1CE
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description MOSFET
Datasheet IPU60R2K1CE DatasheetIPU60R2K1CE Datasheet (PDF)

IPD60R2K1CE,IPU60R2K1CE MOSFET 600VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhileno.

  IPU60R2K1CE   IPU60R2K1CE







N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 3.7 IDM Drain Current-Single Pulsed 6 PD Total Dissipation 38 Tj Operating Junction Temperature -40~150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 3.26 62 UNIT ℃/W ℃/W IPU60R2K1CE isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPU60R2K1CE ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.06mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=0.76A 1.8 2.1 Ω IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 600V; VGS= 0V;Tj=25℃ VDS= 600V; VGS= 0V;Tj=150℃ ISD=0.9A, VGS =0V ±0.1 μA 1 100 μA 0.9 V NOTICE: ISC reserves the rights to make changes of th.


2020-10-06 : IPS60R3K4CE    IRFP360PBF    IRFP250NPBF    IPS65R400CE    IPS60R400CE    IPS70R1K4CE    IPS70R950CE    IRFPE40    IRFR5305    IPS110N12N3   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)