IPU60R3K4CE

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·DC-DC converters ·Motor control ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 2.6 IDM Drain Current-Single Pulsed 3.9 PD Total Dissipation 29 Tj Operating Junction Temperature -40~150 Tstg Storage Temperature -40~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 4.26 62 UNIT ℃/W ℃/W IPU60R3K4CE isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IPU60R3K4CE ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.04mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=0.5A 3.17 3.4 Ω IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS= ±20V;VDS= 0V VDS= 600V; VGS= 0V;Tj=25℃ VDS= 600V; VGS= 0V;Tj=150℃ ISD=0.6A, VGS =0V ±0.1 μA 1 100 μA 0.9 V NOTICE： ISC reserves the rights to make changes of ...