Transistor. IPW50R250CP Datasheet

IPW50R250CP Datasheet PDF


IPW50R250CP
CoolMOSTM Power Transistor
Features
• Lowest figure-of-merit RON x Qg
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC1) for target applications
Product Summary
V DS @Tjmax
R DS(on),max
Q g,typ
IPW50R250CP
550 V
0.250
27 nC
PG-TO247
CoolMOS CP is designed for:
• Hard & soft switching SMPS topologies
• CCM PFC for ATX, Notebook adapter, PDP and LCD TV
• PWM Stages for ATX, Notebook adapter, PDP and LCD TV
Type
IPW50R250CP
Package
PG-TO247
Marking
5R250P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
Pulsed drain current2)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
Gate source voltage
I D,pulse
E AS
E AR
I AR
dv /dt
V GS
T C=100 °C
T C=25 °C
I D=5.2 A, V DD=50 V
I D=5.2 A, V DD=50 V
V DS=0...400 V
static
AC (f>1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Mounting torque
M3 and M3.5 screws
Rev. 2.0
page 1
Value
13
9
31
345
0.52
5.2
50
±20
±30
114
-55 ... 150
60
Unit
A
mJ
A
V/ns
V
W
°C
Ncm
2007-11-07


Part IPW50R250CP
Description Power Transistor
Feature IPW50R250CP; CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extr.
Manufacture Infineon
Datasheet
Download IPW50R250CP Datasheet


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CoolMOSTM Power Transistor Features • Lowest figure-of-merit IPW50R250CP Datasheet





IPW50R250CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
IPW50R250CP
Value
7.8
31
15
Unit
A
V/ns
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
min.
Values
typ.
Unit
max.
- - 1.1 K/W
- - 62
- - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
500
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0.52 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I DSS
V DS=500 V, V GS=0 V,
T j=25 °C
V DS=500 V, V GS=0 V,
T j=150 °C
I GSS
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=7.8 A,
T j=25 °C
V GS=10 V, I D=7.8 A,
T j=150 °C
R G f =1 MHz, open drain
-
-
-
-
-
-
- 1 µA
10 -
- 100 nA
0.22 0.25
0.54
2.2
-
-
Rev. 2.0
page 2
2007-11-07



IPW50R250CP
Parameter
Dynamic characteristics
Symbol Conditions
IPW50R250CP
min.
Values
typ.
Unit
max.
Input capacitance
Output capacitance
C iss
C oss
Effective output capacitance, energy
related5)
C o(er)
Effective output capacitance, time
related6)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C o(tr)
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=100 V,
f =1 MHz
V GS=0 V, V DS=0 V
to 400 V
V DD=400 V,
V GS=10 V, I D=7.8 A,
R G= 23.1
-
-
-
-
-
-
-
-
1420
63
60
130
35
14
80
11
- pF
-
-
-
- ns
-
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q gs
Q gd
Qg
V plateau
V DD=400 V, I D=7.8 A,
V GS=0 to 10 V
-
-
-
-
6 - nC
9-
27 36
5.2 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
V SD
V GS=0 V, I F=7.8 A,
T j=25 °C
t rr
Q rr
V R=400 V, I F=I S,
di F/dt =100 A/µs
I rrm
- 0.9 1.2 V
- 300 - ns
- 3.1 - µC
- 23 - A
1) J-STD20 and JESD22
2) Pulse width t p limited by T j,max
3) Repetitive avalanche causes additional power losses that can be calculated asP AV=E AR*f.
4) I SDI D, di /dt 200A/µs, V DClink=400V, V peak<V (BR)DSS, T j<T jmax, identical low and high side switch
5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 2.0
page 3
2007-11-07






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