isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IPW60R041P6 IIPW60R041P6
·FEATURES ·Static drain-source on-resi...
isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
IPW60R041P6 IIPW60R041P6
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤41mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fast switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
77.5
IDM
Drain Current-Single Pulsed
267
PD
Total Dissipation @TC=25℃
481
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Channel-to-case thermal resistance
Rth(j-a) Channel-to-ambient thermal resistance
MAX 0.26 62
UNIT ℃/W ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
IPW60R041P6 IIPW60R041P6
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID=1mA
600
VGS(th)
Gate Threshold
Voltage
VDS=VGS; ID=2.96mA
3.5
V
4.5
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=35.5A
41
mΩ
IGSS
Gate-Source Leakage Current
VGS= 20V; VDS= 0V
IDSS
Drain-Source Leakage Current
VDS=600V; VGS= 0V
VSD
Diode forward
voltage
IF=44.4A, VGS = 0V
0.1
μA
5
μA
V
NOTICE: ISC reserves the rights to make changes of the content herein ...