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IPW60R099CPA Datasheet

Part Number IPW60R099CPA
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet IPW60R099CPA DatasheetIPW60R099CPA Datasheet (PDF)

CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Product Summary V DS R DS(on),max Q g,typ IPW60R099CPA 600 V 0.105 Ω 60 nC PG-TO247-3 Type IPW60R099CPA Package PG-TO247-3 Marking 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified.

  IPW60R099CPA   IPW60R099CPA






Part Number IPW60R099CP
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPW60R099CPA DatasheetIPW60R099CP Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R099CP IIPW60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on)≤99mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 31 IDM Drain Current-Single Puls.

  IPW60R099CPA   IPW60R099CPA







Part Number IPW60R099CP
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet IPW60R099CPA DatasheetIPW60R099CP Datasheet (PDF)

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  IPW60R099CPA   IPW60R099CPA







Power Transistor

CoolMOSTM Power Transistor Features • Lowest figure-of-merit RON x Qg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Product Summary V DS R DS(on),max Q g,typ IPW60R099CPA 600 V 0.105 Ω 60 nC PG-TO247-3 Type IPW60R099CPA Package PG-TO247-3 Marking 6R099A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1) ID I D,pulse T C=25 °C T C=100 °C T C=25 °C Avalanche energy, single pulse Avalanche energy, repetitive t 1),2) AR Avalanche current, repetitive t 1),2) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS I D=11 A, V DD=50 V I D=11 A, V DD=50 V V DS=0...480 V static Power dissipation P tot T C=25 °C Operating temperature Tj Storage temperature T stg Mounting torque M3 and M3.5 screws Rev. 2.0 page 1 Value 31 19 93 800 1.2 11 50 ±20 255 -40 ... 150 -40 ... 150 60 Unit A mJ A V/ns V W °C Ncm 2010-02-15 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current1) Reverse diode dv /dt 3) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPW60R099CPA Value 18 93 15 Unit A V/ns Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistan.


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