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IPW60R120C7 Datasheet

Part Number IPW60R120C7
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IPW60R120C7 DatasheetIPW60R120C7 Datasheet (PDF)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R120C7 IIPW60R120C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤120mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 19 IDM Drain Current-Si.

  IPW60R120C7   IPW60R120C7






Part Number IPW60R120C7
Manufacturers Infineon
Logo Infineon
Description MOSFET
Datasheet IPW60R120C7 DatasheetIPW60R120C7 Datasheet (PDF)

MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C7 600VCoolMOS™C7PowerTransistor IPW60R120C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™C7PowerTransistor IPW60R120C7 1Description CoolMOS™C7isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. 600VCoolMOS™C7seriescombinestheexperienceoftheleadingSJ MOSFETsupplierwithhigh.

  IPW60R120C7   IPW60R120C7







N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R120C7 IIPW60R120C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤120mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Suitable for hard and soft switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 19 IDM Drain Current-Single Pulsed 66 PD Total Dissipation @TC=25℃ 92 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 1.357 62 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R120C7 IIPW60R120C7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA 600 VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.9mA 3 V 4 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=7.8A 120 mΩ IGSS Gate-Source Leakage Current VGS= 20V; VDS=0V IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V VSD Diode forward voltage IF=7.8A, VGS = 0V 0.1 μA 1 μA V NOTICE: ISC reserves the rights to make changes of the con.


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