IPW60R199CP

www.DataSheet4U.com IPW60R199CP CoolMOSTM Power Transistor Features Lowest figure-of-merit R ONxQg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.199 Ω 33 nC PG-TO247-3-1 CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom Type IPW60R199CP Package PG-TO247-3-1 Ordering Code SP000089802 Marking 6R199P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 P tot T j, T stg M3 and M3.5 screws page 1 T C=25 °C T C=25 °C I D=6.6 A, V DD=50 V I D=6.6 A, V DD=50 V Value 16 10 51 436 0.66 6.6 50 ±20 ±30 139 -55 ... 150 60 W °C Ncm 2006-06-19 A V/ns V mJ Unit A www.DataSheet4U.com IPW60R199CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 51 15 V/ns Unit A Parameter Symbol Conditions min. Val...