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IRF220 Transistor Datasheet PDF

N-Channel MOSFET Transistor

N-Channel MOSFET Transistor

 

 

 

Part Number IRF220
Description N-Channel MOSFET Transistor
Feature INCHANGE Semiconductor isc N-Channel MOS FET Transistor isc Product Specificati on IRF220 DESCRIPTION ·Drain Current ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Sourc e On-Resistance : RDS(on) =0.
8Ω(Max) High Speed Applications APPLICATIONS Switching power supplies ABSOLUTE MAX IMUM RATINGS(Ta=25℃) SYMBOL PARAMET ER VALUE UNIT VDSS VGS ID Ptot Tj Tst g Drain-Source Voltage (VGS=0) 200 V Gate-Source Voltage ±20 V Drain Cu rrent-continuous@ TC=25℃ 5 A Total D issipation@TC=25℃ 40 W Max.
Operati ng Junction Temperature 150 ℃ Stor age Temperature Range -55~150 .
Manufacture Inchange Semiconductor
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IRF220

 

 

 


 

 

 

Part Number IRF220
Description N-Channel Power MOSFET
Feature .
Manufacture Samsung semiconductor
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IRF220

 

 

 


 

 

 

Part Number IRF220
Description N-Channel Power MOSFET
Feature Semiconductor IRF220, IRF221, IRF222, I RF223 4.
0A and 5.
0A, 150V and 200V, 0.
8 and 1.
2 Ohm, N-Channel Power MOSFETs D escription These are N-Channel enhancem ent mode silicon gate power field effe ct transistors.
They are advanced power MOSFETs designed, tested, and guarante ed to withstand a specified level of e nergy in the breakdown avalanche mode o f operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convert ors, motor drivers, relay drivers, and drivers for high power bipolar switchin g transistors requiring high speed and low gate drive pow .
Manufacture Intersil Corporation
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IRF220

 

 

 

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