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IRF221 Datasheet

Part Number IRF221
Manufacturers Intersil Corporation
Logo Intersil Corporation
Description N-Channel Power MOSFET
Datasheet IRF221 DatasheetIRF221 Datasheet (PDF)

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, .

  IRF221   IRF221






Part Number IRF221
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet IRF221 DatasheetIRF221 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF221 DESCRIPTION ·Drain Current ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) ·High Speed Applications APPLICATIONS ·Switching power supplies ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 150 V Gate-Source Voltage ±20 V Drain Current-continuous@ TC=25℃ 5 A Total Dissip.

  IRF221   IRF221







Part Number IRF221
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description N-Channel Power MOSFET
Datasheet IRF221 DatasheetIRF221 Datasheet (PDF)

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  IRF221   IRF221







Part Number IRF221
Manufacturers Harris
Logo Harris
Description N-Channel Power MOSFETs
Datasheet IRF221 DatasheetIRF221 Datasheet (PDF)

Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Features • 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE BRAND IRF220 T.

  IRF221   IRF221







Part Number IRF221
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power MOSFET
Datasheet IRF221 DatasheetIRF221 Datasheet (PDF)

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  IRF221   IRF221







N-Channel Power MOSFET

Semiconductor IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09600. October 1997 Features • 4.0A and 5.0A, 150V and 200V • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF220 IRF221 IRF222 IRF223 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF220 IRF221 IRF222 IRF223 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 199& File Number 1567.2 1 IRF220, IRF221, I.


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