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IRF240 Transistor Datasheet PDFN-Channel MOSFET Transistor N-Channel MOSFET Transistor |
| Part Number | IRF240 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Feature | INCHANGE Semiconductor
isc N-Channel MOS FET Transistor
isc Product Specificati on
IRF240
DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage -
: VDSS= 200V(Min) ·Static Drain-Sour ce On-Resistance
: RDS(on) =0. 18Ω(Max) APPLICATIONS ·Switching power suppli es ·Switching converters,motor driver, relay driver ·Audio amplifier and serv o motors ABSOLUTE MAXIMUM RATINGS(Ta=2 5℃) SYMBOL PARAMETER VALUE UNIT V DSS VGS ID Ptot Tj Tstg Drain-Source V oltage (VGS=0) 200 V Gate-Source Volt age ±20 V Drain Current-continuous@ TC=25℃ 18 A Total Dissipation@TC=25 ℃ 125 W Max. Operating Jun . |
| Manufacture | Inchange Semiconductor |
| Datasheet |
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| Part Number | IRF240 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | IRF240
Data Sheet March 1999 File Number
1584. 3 18A, 200V, 0. 180 Ohm, N-Channe l Power MOSFET This N-Channel enhanceme nt mode silicon gate power field effec t transistor is an advanced power MOSFE Ts designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of oper ation. All of these power MOSFETs are d esigned for applications such as switch ing regulators, switching converters, m otor drivers, relay drivers, and driver s for high power bipolar switching tran sistors requiring high speed and low ga te drive power. These types can be oper ated directly from . |
| Manufacture | Intersil Corporation |
| Datasheet |
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| Part Number | IRF240 |
|---|---|
| Description | N-Channel Power MOSFET |
| Feature | . |
| Manufacture | Samsung semiconductor |
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