PD - 95129A
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Swit...
PD - 95129A
Features
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF
HEXFET® Power
MOSFET
D
VDSS = 55V
RDS(on) = 6.5mΩ
Description This HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
S
ID = 75A
TO-220AB
D2Pak
TO-262
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max. 110 78 75 440 170
Units A
W
Linear Derating Factor
VGS
Gate-to-Source
Voltage
d EAS (Thermally limited) Single Pulse Avalanche Energy
h EAS (Tested ) Single Pulse Avalanche Energy Tested Value
à IAR
Avalanche Current
g EAR
Repetitive Avalanche Energy
1.1 ± 20 180 250 See Fig.12a, 12b, 15, 16
W/°C V mJ
A mJ
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175 °C
Soldering Temperature, for 10 seconds
i Moun...