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IRF341 Datasheet

Part Number IRF341
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description N-Channel MOSFET Transistor
Datasheet IRF341 DatasheetIRF341 Datasheet (PDF)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF341 DESCRIPTION ·Silicon Gate for Fast Switching Speed ·Rugged APPLICATIONS ·High voltage ·High speed application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 350 ±20 V V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -.

  IRF341   IRF341






Part Number IRF341
Manufacturers ART CHIP
Logo ART CHIP
Description N-Channel Power MOSFETs
Datasheet IRF341 DatasheetIRF341 Datasheet (PDF)

IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), SOA and VGS(th) Specified at Elevated Temperature z Rugged TO-204AA IRF340 IRF341 IRF342 IRF343 MTM8.

  IRF341   IRF341







Part Number IRF341
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Power MOSFET
Datasheet IRF341 DatasheetIRF341 Datasheet (PDF)

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  IRF341   IRF341







Part Number IRF341
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description N-Channel Power MOSFET
Datasheet IRF341 DatasheetIRF341 Datasheet (PDF)

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  IRF341   IRF341







N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF341 DESCRIPTION ·Silicon Gate for Fast Switching Speed ·Rugged APPLICATIONS ·High voltage ·High speed application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 350 ±20 V V Drain Current-continuous@ TC=25℃ 8 A Total Dissipation@TC=25℃ 150 W Max. Operating Junction Temperature -55~150 ℃ Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.83 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=5.0A IGSS Gate Source Leakage Current VGS=±20V;VDS=0 IDSS Zero Gate Voltage Drain Current VDS=150V; VGS=0 VSD Diode Forward Voltage IS=8.0A; VGS=0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=25V; VGS=0V; fT=1MHz tr Rise Time td(on) Turn-on Telay Time tf Fall Time td(off) Turn-off Delay Time RGS=12.5Ω ID=5.0A; VDD=90V; RL=50Ω isc Product Specification IRF341 MIN TYPE MAX UNIT 350 V 2.0 4.0 V 0.6 Ω ±100 nA 250 uA 2.0 V 800 150 pF 450 2.


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