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Transistor. IRF341 Datasheet |
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF341
DESCRIPTION
·Silicon Gate for Fast Switching Speed
·Rugged
APPLICATIONS
·High voltage
·High speed application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
350
±20
V
V
Drain Current-continuous@ TC=25℃ 8 A
Total Dissipation@TC=25℃
150 W
Max. Operating Junction Temperature -55~150 ℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
0.83 ℃/W
isc website：www.iscsemi.cn
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=5.0A
IGSS Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS Zero Gate Voltage Drain Current VDS=150V; VGS=0
VSD Diode Forward Voltage
IS=8.0A; VGS=0
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr Rise Time
td(on) Turn-on Telay Time
tf Fall Time
td(off) Turn-off Delay Time
RGS=12.5Ω
ID=5.0A;
VDD=90V;
RL=50Ω
isc Product Specification
IRF341
MIN TYPE MAX UNIT
350 V
2.0 4.0 V
0.6 Ω
±100 nA
250 uA
2.0 V
800
150 pF
450
25
15
ns
20
30
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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