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IRF3704ZCS Datasheet

Part Number IRF3704ZCS
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet IRF3704ZCS DatasheetIRF3704ZCS Datasheet (PDF)

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF3704ZCS ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGSS ID IDM Gate-Source Voltage Drain Current-C.

  IRF3704ZCS   IRF3704ZCS






Part Number IRF3704ZCS
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF3704ZCS DatasheetIRF3704ZCS Datasheet (PDF)

www.DataSheet4U.com PD - 94782 IRF3704ZCS IRF3704ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET VDSS RDS(on) max 20V 7.9m: Qg 8.7nC Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D2Pak IRF3704ZCS TO-262 IRF3704ZCL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-t.

  IRF3704ZCS   IRF3704ZCS







N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF3704ZCS ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 20 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±16 67 47 260 PD Total Dissipation 57 Tj Operating Junction Temperature 150 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.65 40 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF3704ZCS ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.25mA 20 V 1.65 2.55 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=21A 6.3 7.9 mΩ IGSS IDSS VSDF Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage VGS=±16V;VDS= 0V VDS= 16V; VGS= 0V;Tc=25℃ VDS= 16V; VGS= 0V; Tc=125℃ ISD=17A, VGS = 0 V ±0.1 μ.


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